PE Louis Å
PE Louis Å
PE Louis Å
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No | Item | Description |
---|---|---|
1 | Process Type | Plasma Time Divded ALD |
2 | Gases Flow Type | Lateral Type(Traveling Wave) |
3 | Available Thin Film | Metal oxide thin film based DI or O2 Plasma Metal nitride thin film based N2+H2 or NH3 Plasma |
4 | Equipment size (W x L x H) | 780mm x 780mm x 950mm (Standard) |
5 | Base Pressure | < 5 E-3 Torr |
6 | Substrate Size | 8” (ø200) Substrate |
7 | Temperature | Max. 430 ℃ ± 1% (On Set Temperature) |
8 | Number of MFC | Ar 5EA Each of 500 sccm - Precursor delivery 3EA, Precursor dilution 1EA , Reactant dilution 1EA External Gas Reactant Max 3EA 500 sccm (TBD) |
9 | Number of Canister | Max 3EA - Concept #1 : 2 Precursor canister and 1 DI water(Reatant) - Concept #2 : 3 Precursor canister |
10 | Control System | Provided laptop computer & Windows 10 based, advanced and basic GUIswith Import/export of Excel compatible recipes and data |
11 | Gases | All gases regulated more than 4~6 Bar |
12 | Air | CDA, More Than 4~6 Bar |
13 | PCW | PCW, More Than 10LPM (필요 시) |
14 | Power | System : 3Phase , 220V, 60Hz, 30A 이상 |
15 | Vacuum | Recommended Oil rotary pump (>1,000 LPM) |
16 | RF Specification | Power : Max 600 W Radio frequency : 13.56 MHz Plasma type : CCP (Capacitively coupled plasma) |
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노피다솔루션
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2022년 04월
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부산광역시 부산진구 전포대로 199번길 15
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051.803.8352
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