PE Louis 

PE Louis  

PE Louis Å 

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No Item Description
1 Process Type Plasma Time Divded ALD
2 Gases Flow Type Lateral Type(Traveling Wave)
3 Available Thin Film Metal oxide thin film based DI or O2 Plasma
Metal nitride thin film based N2+H2 or NH3 Plasma
4 Equipment size (W x L x H) 780mm x 780mm x 950mm (Standard)
5 Base Pressure < 5 E-3 Torr
6 Substrate Size 8” (ø200) Substrate
7 Temperature Max. 430 ℃ ± 1% (On Set Temperature)
8 Number of MFC Ar 5EA Each of 500 sccm
- Precursor delivery 3EA, Precursor dilution 1EA , Reactant dilution 1EA
External Gas Reactant Max 3EA 500 sccm (TBD)
9 Number of Canister Max 3EA
- Concept #1 : 2 Precursor canister and 1 DI water(Reatant)
- Concept #2 : 3 Precursor canister
10 Control System Provided laptop computer & Windows 10 based, advanced and basic GUIswith Import/export of Excel compatible recipes and data
11 Gases All gases regulated more than 4~6 Bar
12 Air CDA, More Than 4~6 Bar
13 PCW PCW, More Than 10LPM (필요 시)
14 Power System : 3Phase , 220V, 60Hz, 30A 이상
15 Vacuum Recommended Oil rotary pump (>1,000 LPM)
16 RF Specification Power : Max 600 W
Radio frequency : 13.56 MHz
Plasma type : CCP (Capacitively coupled plasma)

COMPANY OVERVIEW

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노피다솔루션

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2022년 04월

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부산광역시 부산진구 전포대로 199번길 15

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051.803.8352

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